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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3000
1000
V GS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
500
100
175 C
-55 C
25 C
100
10
6.0 V
5.5 V
5.0 V
10
o
o
o
2. T C = 25 C
1
0.1
0.01
0.1
*Notes:
1. 250 μ s Pulse Test
o
1
1
2
*Notes:
1. V DS = 20V
2. 250 μ s Pulse Test
4 6
8
V DS ,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.0030
V GS ,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
400
175 C
100
V GS = 10V
o
25 C
0.0025
V GS = 20V
10
o
*Notes:
*Note: T C = 25 C
0.0020
0
100 200 300 400
o
1
0.0
1. V GS = 0V
2. 250 μ s Pulse Test
0.5 1.0
1.5
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
V SD , Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
100000
Ciss = Cgs + Cgd ( Cds = shorted )
Coss = Cds + Cgd
10
V DS = 15V
C iss
Crss = Cgd
8
V DS = 37.5V
V DS = 60V
10000
C oss
*Note:
1. V GS = 0V
2. f = 1MHz
6
1000
C rss
4
2
100
0.1
1 10
V DS , Drain-Source Voltage [V]
80
0
0
*Note: I D = 75A
50 100 150
Q g , Total Gate Charge [nC]
200
?2009 Fairchild Semiconductor Corporation
FDA032N08 Rev. C3
3
www.fairchildsemi.com
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